Keyphrases
Acoustic Waves
15%
AlGaAs
19%
AlGaN-GaN
44%
AlSb
20%
Aluminum Gallium Nitride (AlGaN)
17%
Capping Layer
18%
Double Heterojunction Bipolar Transistor
18%
Electrical Properties
19%
Epilayer
21%
GaAs Quantum Dot
21%
GaAs Substrate
25%
GaAsSb
20%
Gallium Arsenide
87%
GaN HEMT
49%
GaN Heterostructure
20%
GaN-based
14%
Heterojunction Bipolar Transistors
19%
Heterostructure
16%
Heterostructure Field-effect Transistors
15%
High Electron Mobility Transistor
30%
InAlAs
25%
InAs Quantum Dots
37%
Indium Content
14%
Indium Gallium Nitride (InGaN)
100%
InGaAs
51%
InGaAs Quantum Dots
21%
InGaN Quantum Wells
24%
InGaSb
23%
Light-emitting Diodes
34%
Low Temperature
29%
Metal-organic Chemical Vapor Deposition (MOCVD)
33%
Metal-semiconductor-metal Photodetector
14%
Molecular Beam Epitaxy
48%
Multiple Quantum Well Structure
16%
Multiple Quantum Wells
45%
Optical Properties
36%
Optical Transmitters
27%
P-GaN
17%
Photoluminescence
24%
Photonic Crystal Nanocavity
23%
Quantum Dot Lasers
29%
Quantum Dots
55%
Quantum Well
19%
Quantum Well Structure
19%
Recombination
18%
Rectifier
18%
Room Temperature
22%
Self-assembled Quantum Dots
16%
Si Substrate
16%
Temperature Effect
24%
Material Science
Aluminium Gallium Arsenide
7%
Aluminum Nitride
28%
Annealing
10%
Antenna
14%
Bipolar Transistor
22%
Buffer Layer
17%
Capacitance
12%
Carrier Concentration
9%
Current Voltage Characteristics
10%
Density
50%
Dielectric Material
10%
Electrical Resistivity
12%
Electron Mobility
54%
Electronic Circuit
9%
Epilayers
22%
Epitaxial Film
9%
Epitaxy
11%
Field Effect Transistor
21%
Film
24%
GaAs/AlGaAs
12%
Gallium Arsenide
82%
Gallium Nitride
6%
Heterojunction
63%
Indium
20%
Indium Gallium Arsenide
44%
Light-Emitting Diode
35%
Luminescence
9%
Metal Oxide
7%
Metal-Organic Chemical Vapor Deposition
15%
Metal-Oxide-Semiconductor Field-Effect Transistor
10%
Molecular Beam Epitaxy
50%
Nitride Compound
12%
Optical Property
22%
Oxide Compound
15%
Oxide Semiconductor
6%
Photoluminescence
36%
Photonic Crystal
20%
Photosensor
20%
Piezoelectricity
7%
Quantum Dot
64%
Quantum Well
37%
Sapphire
20%
Schottky Barrier
15%
Schottky Diode
17%
Silicon
15%
Surface (Surface Science)
29%
Thermal Stability
10%
Transistor
55%
Transmission Electron Microscopy
11%
ZnO
7%
Engineering
Aluminium Gallium Arsenide
22%
Band Gap
17%
Bipolar Transistor
32%
Breakdown Voltage
27%
Buffer Layer
18%
Cap Layer
18%
Chemical Vapor Deposition
10%
Current Drain
15%
Current Gain
21%
Cutoff Frequency
15%
Device Performance
15%
Dislocation Density
9%
Electric Field
9%
Epitaxial Film
7%
Fermi Level
8%
Field-Effect Transistor
29%
Figure of Merit
8%
Gaas Substrate
15%
Gallium Arsenide
83%
Gate Length
16%
Heterojunctions
69%
Heterostructures
21%
Indium Content
10%
Indium Gallium Arsenide
61%
Light-Emitting Diode
44%
Localized State
9%
Low-Temperature
30%
Luminaires
10%
Metal Organic Chemical Vapor Deposition
16%
Metal-Oxide-Semiconductor Field-Effect Transistor
10%
Nitride
12%
Ohmic Contacts
12%
Output Power
8%
Passivation
9%
Photodetector
12%
Photodiode
19%
Photometer
20%
Photonics
32%
Piezoelectric
14%
Quantum Dot
79%
Quantum Well
72%
Responsivity
7%
Room Temperature
19%
Sheet Resistance
8%
Si Substrate
13%
Superlattice
12%
Temperature Dependence
9%
Terahertz
15%
Thin Films
8%
Vapor Deposition
9%