Keyphrases
Indium Gallium Nitride (InGaN)
100%
Gallium Arsenide
87%
Quantum Dots
55%
InGaAs
50%
GaN HEMT
49%
Molecular Beam Epitaxy
48%
Multiple Quantum Wells
45%
AlGaN-GaN
44%
InAs Quantum Dots
37%
Optical Properties
36%
Light-emitting Diodes
34%
Metal-organic Chemical Vapor Deposition (MOCVD)
33%
High Electron Mobility Transistor
30%
Quantum Dot Lasers
29%
Low Temperature
29%
Optical Transmitters
27%
GaAs Substrate
25%
InAlAs
25%
Temperature Effect
24%
InGaN Quantum Wells
24%
Photoluminescence
24%
InGaSb
23%
Photonic Crystal Nanocavity
23%
Room Temperature
22%
GaAs Quantum Dot
21%
Epilayer
21%
InGaAs Quantum Dots
21%
AlSb
20%
GaN Heterostructure
20%
Heterojunction Bipolar Transistors
19%
Quantum Well
19%
Electrical Properties
19%
GaAsSb
19%
Quantum Well Structure
19%
AlGaAs
19%
Capping Layer
18%
Recombination
18%
Double Heterojunction Bipolar Transistor
18%
Rectifier
18%
Aluminum Gallium Nitride (AlGaN)
17%
P-GaN
17%
Si Substrate
16%
Heterostructure
16%
Self-assembled Quantum Dots
16%
Multiple Quantum Well Structure
16%
Acoustic Waves
15%
Heterostructure Field-effect Transistors
15%
Indium Content
14%
Metal-semiconductor-metal Photodetector
14%
GaN-based
14%
Material Science
Gallium Arsenide
94%
Quantum Dot
64%
Heterojunction
64%
Transistor
55%
Electron Mobility
54%
Density
52%
Molecular Beam Epitaxy
51%
Indium Gallium Arsenide
44%
Quantum Well
37%
Photoluminescence
35%
Light-Emitting Diode
31%
Surface (Surface Science)
29%
Aluminum Nitride
28%
Film
25%
Field Effect Transistor
23%
Optical Property
22%
Bipolar Transistor
22%
Epilayers
22%
Indium
20%
Photonic Crystal
20%
Sapphire
20%
Aluminium Gallium Arsenide
18%
Buffer Layer
17%
Schottky Diode
17%
Phase Composition
17%
Schottky Barrier
16%
Metal-Organic Chemical Vapor Deposition
15%
Silicon
15%
Oxide Compound
14%
Capacitance
13%
Electrical Resistivity
13%
Nitride Compound
12%
Epitaxy
11%
Transmission Electron Microscopy
11%
Dielectric Material
10%
Metal-Oxide-Semiconductor Field-Effect Transistor
10%
Thermal Stability
10%
Annealing
10%
Current Voltage Characteristics
10%
Carrier Concentration
9%
Luminescence
9%
Electronic Circuit
9%
Epitaxial Film
9%
Oxidation Reaction
8%
ZnO
8%
Piezoelectricity
7%
Metal Oxide
7%
Oxide Semiconductor
6%
Gallium Nitride
6%
Thin Films
6%
Engineering
Gallium Arsenide
82%
Quantum Dot
79%
Quantum Well
72%
Heterojunctions
69%
Indium Gallium Arsenide
61%
Light-Emitting Diode
44%
Bipolar Transistor
32%
Photonics
32%
Low-Temperature
31%
Field-Effect Transistor
29%
Breakdown Voltage
27%
Aluminium Gallium Arsenide
22%
Current Gain
21%
Heterostructures
21%
Photometer
20%
Photodiode
19%
Room Temperature
19%
Cap Layer
18%
Buffer Layer
18%
Phase Composition
17%
Band Gap
17%
Gate Length
16%
Metal Organic Chemical Vapor Deposition
16%
Terahertz
15%
Device Performance
15%
Cutoff Frequency
15%
Gaas Substrate
15%
Current Drain
15%
Piezoelectric
14%
Si Substrate
13%
Photodetector
12%
Nitride
12%
Ohmic Contacts
12%
Superlattice
12%
Energy Engineering
11%
Indium Content
10%
Metal-Oxide-Semiconductor Field-Effect Transistor
10%
Luminaires
10%
Chemical Vapor Deposition
10%
Passivation
9%
Vapor Deposition
9%
Localized State
9%
Electric Field
9%
Temperature Dependence
9%
Thin Films
9%
Dislocation Density
9%
Output Power
8%
Figure of Merit
8%
Fermi Level
8%
Sheet Resistance
8%