Projects per year
Personal profile
Research Expertise
Semiconductor materials and components/photoelectric components/high-speed components
Expertise related to UN Sustainable Development Goals
In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This person’s work contributes towards the following SDG(s):
Fingerprint
Dive into the research topics where Jen-Inn Chyi is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
- 1 Similar Profiles
Collaborations and top research areas from the last five years
Recent external collaboration on country/territory level. Dive into details by clicking on the dots or
-
-
High Breakdown Voltage AlInGaN/GaN HEMTs on QST Substrates
Chyi, J.-I. (PI)
1/07/24 → 30/06/26
Project: Research
-
WIN-NCU Compound Semiconductors Research Center (3/3)
Chyi, J.-I. (PI)
1/11/24 → 31/10/25
Project: Research
-
-
-
Supercritical nitrogen-enhanced interface control for high-frequency T-gate GaN HEMTs fabricated on 8-inch CMOS-compatible wafer
Tu, P. T., Chen, H. C., Chou, S. Y., Chen, S. K., Chen, Y. C., Lin, C. H., Yeh, P. C., Chyi, J. I., Chang, T. C., Lee, P. T. & Kuo, H. C., Jan 2026, In: Materials Science in Semiconductor Processing. 201, 110101.Research output: Contribution to journal › Article › peer-review
-
Fabrication of InAs 2D submonolayer nanostructure-based solar cells with InGaAs/GaAsSb double-well structure
Liu, W. S., Yang, T. K., Hsu, M. E., Hsu, K. Y., Kondapavuluri, B. & Chyi, J. I., Feb 2025, In: Optical Materials. 159, 116576.Research output: Contribution to journal › Article › peer-review
2 Scopus citations -
Impact of High-k Passivation Layers on the Electrical Stability of p-GaN Gate HEMTs
Chen, S. K., Hong, Z. J., Tu, P. T., Chen, H. Y., Hsieh, C. Y., Shieh, D., Yeh, P. C., Sheu, S. S., Lo, W. C., Chang, S. C., Shen, C. H. & Chyi, J. I., 2025, 2025 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2025 - Proceedings of Technical Papers. Institute of Electrical and Electronics Engineers Inc., (2025 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2025 - Proceedings of Technical Papers).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
-
InAs/AlSb III-V NVM with High-Speed (5ns) Low-Power (1V) QW-Tunnel Program for 10-Year Storage by 2DEG-Enhanced Retention
Hou, J. S., Chung, Z. Y., Chen, M. J., Ye, R. F., Chen, L. C., Hsieh, E.-R. & Chyi, J. I., 2025, 2025 Silicon Nanoelectronics Workshop, SNW 2025. Institute of Electrical and Electronics Engineers Inc., p. 32-33 2 p. (2025 Silicon Nanoelectronics Workshop, SNW 2025).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
-
Effects of Channel Thickness on DC/RF Performance of InAlGaN/AlN/GaN HEMTs
Shieh, D., Lee, Z. F., Lee, M. Y., Chen, H. Y., Hsieh, C. Y., Tu, P. T., Yeh, P. C., Sheu, S. S., Lo, W. C., Chang, S. C., Shen, C. H., Shieh, J. M. & Chyi, J. I., 2024, 2024 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2024 - Proceedings. Institute of Electrical and Electronics Engineers Inc., (2024 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2024 - Proceedings).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
Datasets
-
Supplement Number 1
Mondal, A. (Creator), Yadav, M. K. (Creator), Nandi, A. (Creator), Sanyal, I. (Creator), Sharma, S. K. (Contributor), Chyi, J.-I. (Creator) & Bag, A. (Creator), AIP Publishing, 2024
DOI: 10.60893/figshare.apl.26139301, https://aip.figshare.com/articles/figure/Supplement_Number_1/26139301
Dataset
-
Supplement Number 1
Mondal, A. (Creator), Yadav, M. K. (Creator), Nandi, A. (Creator), Sanyal, I. (Creator), Sharma, S. K. (Contributor), Chyi, J.-I. (Creator) & Bag, A. (Creator), AIP Publishing, 2024
DOI: 10.60893/figshare.apl.26139301.v1, https://aip.figshare.com/articles/figure/Supplement_Number_1/26139301/1
Dataset