Projects per year
Personal profile
Research Expertise
Semiconductor materials and components/photoelectric components/high-speed components
Expertise related to UN Sustainable Development Goals
In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This person’s work contributes towards the following SDG(s):
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Collaborations and top research areas from the last five years
Recent external collaboration on country/territory level. Dive into details by clicking on the dots or
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WIN-NCU Compound Semiconductors Research Center (3/3)
Chyi, J.-I. (PI)
1/11/24 → 31/10/25
Project: Research
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High Breakdown Voltage AlInGaN/GaN HEMTs on QST Substrates
Chyi, J.-I. (PI)
1/07/24 → 30/06/26
Project: Research
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Fabrication of InAs 2D submonolayer nanostructure-based solar cells with InGaAs/GaAsSb double-well structure
Liu, W. S., Yang, T. K., Hsu, M. E., Hsu, K. Y., Kondapavuluri, B. & Chyi, J. I., Feb 2025, In: Optical Materials. 159, 116576.Research output: Contribution to journal › Article › peer-review
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Effects of Channel Thickness on DC/RF Performance of InAlGaN/AlN/GaN HEMTs
Shieh, D., Lee, Z. F., Lee, M. Y., Chen, H. Y., Hsieh, C. Y., Tu, P. T., Yeh, P. C., Sheu, S. S., Lo, W. C., Chang, S. C., Shen, C. H., Shieh, J. M. & Chyi, J. I., 2024, 2024 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2024 - Proceedings. Institute of Electrical and Electronics Engineers Inc., (2024 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2024 - Proceedings).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
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Pinch-off driven near-ideal output characteristics of n-Ga2O3/p-GaN light effect transistor for UV photonics
Mondal, A., Yadav, M. K., Nandi, A., Kumar, S., Sanyal, I., Sharma, S. K., Chyi, J. I. & Bag, A., 8 Jul 2024, In: Applied Physics Letters. 125, 2, 023506.Research output: Contribution to journal › Article › peer-review
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Scalable approach for growing hexagonal boron nitride on silicon and its role in III-nitride van der Waals epitaxy
Rather, M. A., Hsu, S. H., Lin, C. C., Tien, Y. H., Wu, C. T., Yu, T. Y., Lin, K. L., Lai, K. Y. & Chyi, J. I., 21 Nov 2024, In: Journal of Applied Physics. 136, 19, 195301.Research output: Contribution to journal › Article › peer-review
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The effects of strain compensation in type-II GaAsSb/InGaAs quantum wells grown on GaAs (001) substrates
Zon, Voranthamrong, S., Cheng, C. C., Lo, T. W., Li, Z. L., Liu, C. N., Chiang, C. D., Hung, L. W., Hsu, M. S., Liu, W. S., Chyi, J. I. & Tu, C. W., 28 Jan 2024, In: Journal of Applied Physics. 135, 4, 044301.Research output: Contribution to journal › Article › peer-review
Open Access2 Scopus citations
Datasets
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Supplement Number 1
Mondal, A. (Creator), Yadav, M. K. (Creator), Nandi, A. (Creator), Sanyal, I. (Creator), Sharma, S. K. (Contributor), Chyi, J.-I. (Creator) & Bag, A. (Creator), AIP Publishing, 2024
DOI: 10.60893/figshare.apl.26139301.v1, https://aip.figshare.com/articles/figure/Supplement_Number_1/26139301/1
Dataset
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Supplement Number 1
Mondal, A. (Creator), Yadav, M. K. (Creator), Nandi, A. (Creator), Sanyal, I. (Creator), Sharma, S. K. (Contributor), Chyi, J.-I. (Creator) & Bag, A. (Creator), AIP Publishing, 2024
DOI: 10.60893/figshare.apl.26139301, https://aip.figshare.com/articles/figure/Supplement_Number_1/26139301
Dataset