Engineering
Amplifier
47%
Balanced Mixer
28%
Balun
74%
Bandpass Filter
13%
Chip Area
27%
Compact Size
18%
Complementary Metal-Oxide-Semiconductor
17%
Conversion Gain
19%
Conversion Loss
11%
Db Bandwidth
29%
Db Compression Point
15%
Electric Lines
41%
Electric Power Utilization
41%
Error Vector
12%
Figure of Merit
19%
Gallium Arsenide
12%
Harmonics
17%
Insertion Loss
27%
K-Band
34%
Ka-Band
14%
Local Oscillator
13%
Low Noise Amplifier
85%
Low Power Consumption
19%
Lowpass Filter
14%
Matching Network
20%
Measured Result
19%
Millimeter Wave
15%
Mixers (Machinery)
100%
Monolithic Microwave Integrated Circuits
35%
Noise Figure
39%
Order Intercept Point
14%
Oscillator
26%
Output Power
34%
Passive Device
29%
Phase Noise
47%
Power Added Efficiency
36%
Power Amplifier
95%
Power Gain
25%
Q Factor
12%
Radio Frequency
15%
Resistive
28%
Resonator
15%
Return Loss
16%
Signal Modulation
12%
Supply Voltage
20%
Ultra-Wideband
18%
V-Band
46%
Voltage-Controlled Oscillator
67%
Waveguide
22%
X-Band
18%
Keyphrases
1-dB Compression Point
19%
3-dB Bandwidth
25%
90-nm CMOS Technology
25%
Balun
54%
Broadside Coupling
15%
Chip Area
27%
Chip Size
23%
CMOS Low Noise Amplifier
19%
CMOS Process
35%
CMOS Technology
70%
Compact Size
18%
Complementary Metal Oxide Semiconductor
16%
Conversion Gain
15%
Conversion Loss
16%
Differential Low Noise Amplifier
16%
Double-balanced Mixer
17%
Dual Balun
21%
Fully Integrated
26%
High Efficiency
24%
High Linearity
22%
High Performance
15%
Inductors
25%
Insertion Loss
19%
Integrated Passive Device Technology
26%
K-band
38%
Low Loss
35%
Low Noise Amplifier
64%
Low Phase Noise
23%
Low Power
34%
Low Power Consumption
18%
Mixer
57%
Noise Figure
31%
On chip
27%
Phase Noise
25%
Power Added Efficiency
42%
Power Amplifier
60%
Power Consumption
34%
Power Gain
29%
Power Output
22%
Return Loss
16%
SiGe
18%
SiGe HBT
17%
Supply Voltage
24%
Third-order Intercept Point
17%
Transmission Line Transformer
31%
Ultra-wideband
18%
V-band
46%
Voltage-controlled Oscillator
56%
Wideband
25%
X-band
20%
