Engineering
Mixers (Machinery)
100%
Power Amplifier
95%
Low Noise Amplifier
85%
Balun
74%
Voltage-Controlled Oscillator
67%
Phase Noise
50%
Amplifier
47%
V-Band
46%
Electric Power Utilization
43%
Electric Lines
41%
Noise Figure
39%
Power Added Efficiency
36%
Monolithic Microwave Integrated Circuits
35%
Output Power
35%
K-Band
34%
Db Bandwidth
29%
Passive Device
29%
Balanced Mixer
28%
Resistive
28%
Chip Area
27%
Insertion Loss
27%
Power Gain
25%
Waveguide
22%
Supply Voltage
21%
Matching Network
20%
Figure of Merit
20%
Conversion Gain
19%
Low Power Consumption
19%
Measured Result
19%
Ultra-Wideband
18%
X-Band
18%
Compact Size
18%
Harmonics
17%
Complementary Metal-Oxide-Semiconductor
17%
Return Loss
16%
Millimeter Wave
15%
Resonator
15%
Radio Frequency
15%
Db Compression Point
15%
Lowpass Filter
14%
Order Intercept Point
14%
Ka-Band
14%
Gallium Arsenide
13%
Local Oscillator
13%
Bandpass Filter
13%
Signal Modulation
12%
Maximum Output Power
12%
Error Vector
12%
Conversion Loss
11%
Combiner
10%
Keyphrases
CMOS Technology
70%
Low Noise Amplifier
64%
Power Amplifier
60%
Mixer
57%
Voltage-controlled Oscillator
56%
Balun
54%
V-band
46%
Power Added Efficiency
42%
K-band
38%
Low Loss
35%
CMOS Process
35%
Low Power
34%
Power Consumption
34%
Noise Figure
31%
Transmission Line Transformer
31%
Power Gain
29%
Chip Area
27%
On chip
27%
Integrated Passive Device Technology
26%
Fully Integrated
26%
90-nm CMOS Technology
25%
Wideband
25%
Inductors
25%
Phase Noise
25%
3-dB Bandwidth
25%
Supply Voltage
24%
High Efficiency
24%
Low Phase Noise
23%
Chip Size
23%
High Linearity
22%
Power Output
22%
Dual Balun
21%
X-band
20%
Insertion Loss
19%
1-dB Compression Point
19%
CMOS Low Noise Amplifier
19%
Ultra-wideband
18%
Compact Size
18%
Low Power Consumption
18%
SiGe
18%
SiGe HBT
17%
Third-order Intercept Point
17%
Double-balanced Mixer
17%
Differential Low Noise Amplifier
16%
Conversion Loss
16%
Complementary Metal Oxide Semiconductor
16%
Return Loss
16%
Broadside Coupling
15%
Conversion Gain
15%
High Performance
15%
