Engineering & Materials Science
FinFET
100%
Data storage equipment
53%
RRAM
53%
Tunnel field effect transistors
36%
Transistors
27%
Metals
26%
Hardware security
25%
Negative bias temperature instability
25%
Doping (additives)
24%
Static random access storage
24%
Drain current
23%
Gate dielectrics
23%
Carrier transport
22%
Oxides
22%
Durability
22%
Demonstrations
21%
Capacitance
21%
Field effect transistors
20%
Ballistics
18%
Telegraph
17%
Internet of things
16%
Ions
15%
Electric fuses
15%
Leakage currents
15%
Ferroelectric materials
14%
Hot carriers
13%
Strained silicon
12%
Degradation
12%
Temperature
11%
Scattering
10%
Electric potential
10%
MOSFET devices
10%
Hamming distance
10%
Surface roughness
9%
Electric breakdown
8%
Networks (circuits)
8%
Nonvolatile storage
8%
Computer programming
7%
Hafnium
7%
Cryogenics
7%
High-k dielectric
7%
Boron
7%
Nitrides
7%
Substrates
7%
Heating
7%
Foundries
6%
Nitrogen
6%
Electrodes
6%
Logic gates
6%
High electron mobility transistors
5%
Chemical Compounds
Drain Current
38%
Resistance
25%
Foundry
23%
Velocity
22%
Tunneling
20%
Application
19%
Voltage
15%
Charge Pumping
15%
Dielectric Material
13%
Leakage Current
13%
Compound Mobility
13%
Strain
12%
Parasitic
10%
Interface Trap
9%
Dipole
8%
Cryogenics
8%
Thermal Resistance
8%
Weight
8%
Conductance
7%
Field Effect
7%
Dissipation
7%
Schottky Barrier
6%
Length
6%
Quantum Theory
6%
Oxide
6%
Hafnium Atom
6%
Time
5%
Tunneling Current
5%
Ion
5%
Reduction
5%
Surface Roughness
5%
Physics & Astronomy
field effect transistors
34%
CMOS
30%
metal oxide semiconductors
23%
logic
13%
random numbers
13%
fuses
13%
ballistics
11%
traps
10%
cells
10%
leakage
9%
endurance
8%
generators
8%
silicon
8%
programming
7%
surface roughness
7%
learning
6%
carbon
6%
performance
6%
transistors
6%
fins
5%
SOI (semiconductors)
5%
noise measurement
5%
electron mobility
5%
injection
5%
