Engineering & Materials Science
FinFET
100%
RRAM
55%
Data storage equipment
52%
Tunnel field effect transistors
37%
Transistors
28%
Metals
27%
Negative bias temperature instability
26%
Doping (additives)
25%
Static random access storage
24%
Drain current
24%
Carrier transport
23%
Oxides
23%
Hardware security
23%
Demonstrations
22%
Gate dielectrics
22%
Field effect transistors
21%
Durability
20%
Capacitance
20%
Ballistics
19%
Telegraph
18%
Internet of things
17%
Electric fuses
16%
Ions
15%
Leakage currents
15%
Hot carriers
13%
Ferroelectric materials
13%
Strained silicon
13%
Degradation
12%
Temperature
11%
Scattering
10%
Electric potential
10%
MOSFET devices
10%
Surface roughness
9%
Electric breakdown
9%
Networks (circuits)
8%
Nonvolatile storage
8%
Computer programming
8%
Hafnium
8%
Cryogenics
8%
High-k dielectric
8%
Boron
7%
Nitrides
7%
Hamming distance
7%
Substrates
7%
Heating
7%
Foundries
6%
Nitrogen
6%
Electrodes
6%
Logic gates
6%
High electron mobility transistors
6%
Chemical Compounds
Drain Current
39%
Resistance
25%
Foundry
24%
Velocity
23%
Tunneling
21%
Application
20%
Voltage
16%
Charge Pumping
15%
Dielectric Material
14%
Leakage Current
13%
Compound Mobility
13%
Strain
12%
Interface Trap
10%
Dipole
9%
Cryogenics
8%
Thermal Resistance
8%
Parasitic
8%
Conductance
7%
Weight
7%
Field Effect
7%
Dissipation
7%
Schottky Barrier
7%
Length
6%
Quantum Theory
6%
Oxide
6%
Hafnium Atom
6%
Time
6%
Tunneling Current
5%
Surface Roughness
5%
Transport Property
5%
Implant
5%
Physics & Astronomy
field effect transistors
35%
CMOS
31%
metal oxide semiconductors
23%
logic
14%
random numbers
13%
fuses
13%
ballistics
11%
traps
10%
cells
10%
leakage
10%
endurance
8%
generators
8%
silicon
8%
programming
7%
surface roughness
7%
learning
7%
carbon
6%
performance
6%
transistors
6%
fins
5%
SOI (semiconductors)
5%
noise measurement
5%
electron mobility
5%
injection
5%
saturation
5%
