Engineering & Materials Science
FinFET
100%
Data storage equipment
55%
RRAM
51%
Tunnel field effect transistors
34%
Transistors
30%
Metals
27%
Static random access storage
26%
Hardware security
24%
Negative bias temperature instability
24%
Durability
24%
Doping (additives)
23%
Drain current
23%
Carrier transport
22%
Field effect transistors
22%
Gate dielectrics
22%
Oxides
21%
Demonstrations
21%
Capacitance
20%
Ballistics
17%
Ferroelectric materials
17%
Telegraph
16%
Internet of things
16%
Ions
15%
Electric fuses
15%
Leakage currents
14%
Hot carriers
12%
Strained silicon
12%
Degradation
12%
Temperature
11%
Hamming distance
10%
Scattering
10%
Electric potential
10%
MOSFET devices
9%
Networks (circuits)
9%
Surface roughness
9%
Electric breakdown
8%
Nonvolatile storage
7%
Computer programming
7%
Hafnium
7%
Cryogenics
7%
High-k dielectric
7%
Boron
7%
Nitrides
7%
Substrates
7%
Gates (transistor)
7%
Heating
6%
Logic gates
6%
Foundries
6%
Nitrogen
6%
Electrodes
5%
Chemical Compounds
Drain Current
36%
Resistance
24%
Foundry
22%
Velocity
22%
Tunneling
19%
Application
18%
Voltage
15%
Charge Pumping
14%
Dielectric Material
13%
Leakage Current
12%
Compound Mobility
12%
Strain
12%
Parasitic
10%
Field Effect
9%
Interface Trap
9%
Dipole
8%
Cryogenics
8%
Thermal Resistance
7%
Weight
7%
Conductance
7%
Time
7%
Dissipation
7%
Schottky Barrier
6%
Length
6%
Quantum Theory
6%
Entropy
6%
Oxide
5%
Hafnium Atom
5%
Tunneling Current
5%
Ion
5%
Reduction
5%
Physics & Astronomy
field effect transistors
33%
CMOS
29%
metal oxide semiconductors
22%
logic
13%
random numbers
12%
fuses
12%
ballistics
11%
traps
9%
cells
9%
leakage
9%
endurance
8%
generators
8%
silicon
7%
programming
7%
surface roughness
6%
learning
6%
carbon
6%
performance
6%
transistors
5%
fins
5%
SOI (semiconductors)
5%
noise measurement
5%
electron mobility
5%
