Projects per year
Personal profile
Research Expertise
Neural network computing component design/operation/application, highly integrated resistive memory design/operation/application
Expertise related to UN Sustainable Development Goals
In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This person’s work contributes towards the following SDG(s):
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Dive into the research topics where E-Ray Hsieh is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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Collaborations and top research areas from the last five years
Recent external collaboration on country/territory level. Dive into details by clicking on the dots or
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探索記憶體內運算的未知邊界:同時具備儲存、計算、搜尋功能的四位單胞雙阻變閘三態內容定址非揮發記憶體晶片之設計與實作(3/4)
Hsieh, E.-R. (PI)
1/08/24 → 31/07/25
Project: Research
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探索記憶體內運算的未知邊界:同時具備儲存、計算、搜尋功能的四位單胞雙阻變閘三態內容定址非揮發記憶體晶片之設計與實作(1/4)
Hsieh, E.-R. (PI)
1/08/22 → 31/07/23
Project: Research
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仿生運算於AI晶片之開發與應用：建構通用型類神經網路技術平台與異質晶片整合於圖片辨識之應用(2/3)
Hsieh, E.-R. (PI)
1/02/21 → 31/01/22
Project: Research
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A New 1C1T1R nv-TCAM with Simultaneously Hybrid Ferroelectricity and Memristor Layers Feasible for Ultra-highly-dense and High-performance In-memory-searching
Hsueh, Y. L., Lin, R. Q., Huang, Y. X., Lin, Y. H., Chang, K. H., Shen, T. H., Hsieh, E. R. & Wong, S. S., 2024, IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024. Institute of Electrical and Electronics Engineers Inc., (IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
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A New Design of Ultra-Scaled and High-Density 1-nm Node 6T-SRAM Cell by Lateral-and-Complementary FETs (LC-FETs) with only 21 F2
Cheng, K. W., Liu, Y. J. & Ray Hsieh, E., 2024, 2024 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2024 - Proceedings. Institute of Electrical and Electronics Engineers Inc., (2024 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2024 - Proceedings).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
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A Novel RRAM-based Ternary Strong-PUF with High Security Intensity Feasible for Low-earth Orbit Satellites in the 6G Era
Huang, P. H., Lee, K. Y., Lin, S. H., Hsieh, E. R., Lin, Y. C., Lin, C. J., Tseng, J. C., Wang, C. F., Chu, W. T., Chih, Y. D. & Chang, J., 2024, 2024 IEEE Silicon Nanoelectronics Workshop, SNW 2024. Institute of Electrical and Electronics Engineers Inc., p. 23-24 2 p. (2024 IEEE Silicon Nanoelectronics Workshop, SNW 2024).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
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Design of the 2-nm Nanosheet NAND-type TCAM with High Speed and Compat Cell-size: 45% Layout-reduction of 3-nm TCAM
Yu, L. A., Chou, C. Y., Lin, C. C., Tsai, T. Y. & Hsieh, E. R., 2024, 2024 IEEE Silicon Nanoelectronics Workshop, SNW 2024. Institute of Electrical and Electronics Engineers Inc., p. 119-120 2 p. (2024 IEEE Silicon Nanoelectronics Workshop, SNW 2024).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
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1-Transistor 1-Source/Channel/Drain-Diode (1T1D) One-Time-Programmable Memory in 14-nm FinFET
Hsieh, E. R., Luo, Y. M., Huang, Y. X., Su, H. S., Lin, R. Q., Lin, Y. H., Chang, K. H., Shen, T. H. & Liu, C. H., 1 Mar 2023, In: IEEE Electron Device Letters. 44, 3, p. 404-407 4 p.Research output: Contribution to journal › Article › peer-review
3 Scopus citations