Projects per year
Personal profile
Research Expertise
Compound semiconductors and nanomaterials for electric vehicles, biomedical and clean energy applications
Expertise related to UN Sustainable Development Goals
In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This person’s work contributes towards the following SDG(s):
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Collaborations and top research areas from the last five years
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Projects
- 1 Active
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Driving waveform modification for investigating trade-off between switching loss and gate overshoot in SiC MOSFETs
Chen, B. R., Sung, C., Hsiao, Y. S., Yu, W. C., Lin, W. C., Elangovan, S., Hsiao, Y. K., Kuo, H. C., Tu, C. C. & Wu, T. L., Apr 2025, In: Microelectronics Reliability. 167, 115653.Research output: Contribution to journal › Article › peer-review
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High-Frequency Pulsed Laser Driver Using Complementary GaN HEMTs
Liu, C. Y., Lin, C. H., Kuo, H. C., Tang, L. C., Hong, Y. H., Tu, C. C., Chang, E. Y. & Chieng, W. H., 2025, In: IEEE Transactions on Power Electronics. 40, 2, p. 3370-3384 15 p.Research output: Contribution to journal › Article › peer-review
Open Access5 Scopus citations -
Toward Understanding the Positive Shift of Reverse Turn-on Voltage in the Third Quadrant Operation in Planar SiC Power MOSFETs after Avalanche Breakdown
Lin, W. C., Hsiao, Y. S., Sung, C., Thi Bich Ngoc, C., Kumar, R., Chang, P. J., Elangovan, S., Yeh, S. S., Hung, C. L., Hsiao, Y. K., Kuo, H. C., Tu, C. C. & Wu, T. L., 2025, In: IEEE Transactions on Electron Devices. 72, 3, p. 1270-1275 6 p.Research output: Contribution to journal › Article › peer-review
1 Scopus citations -
Universal Active Gate Driver IC With Closed-Loop Timing Control and Gate-Sensing Technique for Silicon Carbide Power Devices
Kuo, C. W., Wang, T. W., Chen, L. C., Tu, C. C., Hsiao, Y. K. & Chen, P. H., 2025, In: IEEE Transactions on Power Electronics. 40, 4, p. 5120-5129 10 p.Research output: Contribution to journal › Article › peer-review
1 Scopus citations -
A Novel Gate Driver with Charge Sharing Technique to Optimize Gate Turn-On/Turn-Off Overshoot and Switching Loss Trade-off in SiC Power MOSFETs
Hsiao, Y. S., Yu, W. C., Sung, C., Lin, W. C., Hsiao, Y. K., Hung, C. L., Huang, Z. H., Kuo, H. C., Tu, C. C. & Wu, T. L., 2024, 2024 36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024 - Conference Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 184-187 4 p. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review