Keyphrases
AlGaAs
27%
AlGaN-GaN
50%
AlInGaN
13%
AlSb
17%
Aluminum Gallium Nitride (AlGaN)
19%
AlxGa1-xN
18%
Annealing
14%
Backscatter
20%
Buffer Layer
12%
Building Model
30%
Capping Layer
23%
Central Taiwan
13%
Cm(III)
15%
Device Performance
17%
Differential Interferometric Synthetic Aperture Radar (DInSAR)
14%
Doppler Velocity
15%
Double Heterojunction Bipolar Transistor
21%
E-region
16%
Earthquake
16%
Electrical Properties
21%
Epilayer
32%
Field-aligned Irregularities
20%
Field-effect Transistors
12%
Fmax
13%
Frequency Domain Interferometry
12%
GaAs Quantum Dot
21%
GaAs Substrate
29%
GaAs-AlGaAs
16%
GaAsSb
24%
Gallium Arsenide
98%
GaN HEMT
59%
GaN Heterostructure
23%
GaN-based
15%
Gate Length
15%
Heterojunction Bipolar Transistors
24%
Heterostructure
14%
Heterostructure Field-effect Transistors
18%
High Electron Mobility Transistor
30%
Hyperspectral
18%
InAlAs
25%
InAs Quantum Dots
31%
Indium Content
14%
Indium Gallium Nitride (InGaN)
91%
InGaAs
54%
InGaAs Quantum Dots
15%
InGaN Quantum Wells
26%
InGaSb
25%
Interferometric Synthetic Aperture Radar (InSAR)
18%
Interferometry
16%
Land Subsidence
15%
Landslide
22%
Landslide Susceptibility
12%
Light-emitting Diodes
30%
Location Estimation
12%
Low Temperature
35%
Metal-organic Chemical Vapor Deposition (MOCVD)
29%
Metal-semiconductor-metal Photodetector
18%
Molecular Beam Epitaxy
60%
MSM Photodetector
13%
Multiple Quantum Well Structure
19%
Multiple Quantum Wells
43%
Ni-P
14%
Ohmic Contact
16%
Optical Properties
31%
Optical Transmitters
18%
P-GaN
21%
P-type
13%
Photoluminescence
26%
Photonic Crystal Nanocavity
14%
Photorealistic
12%
Plasma Irregularities
15%
Quantum Dot Lasers
22%
Quantum Dots
50%
Quantum Well
18%
Quantum Well Structure
22%
Radar Echo
13%
Recombination
15%
Rectifier
20%
Reverse Breakdown Voltage
16%
Room Temperature
23%
Sapphire
16%
SAR Interferometry
14%
Schottky Rectifier
17%
Self-assembled Quantum Dots
16%
Si Substrate
19%
Southern Taiwan
20%
Spatial Analysis
13%
Spectral Width
18%
Sporadic E
16%
Stimulated Emission
12%
Surface Deformation
27%
Taiwan
100%
Temperature Effect
24%
Three-dimensional (3D)
15%
Transconductance
13%
Transistor
15%
Turn-on Voltage
12%
Ultraviolet Light-emitting Diode (UV-LED)
12%
Undoped
13%
VHF Radar
49%
Engineering
Activation Energy
7%
Aluminium Gallium Arsenide
31%
Antenna
12%
Band Gap
14%
Barrier Layer
7%
Bias Voltage
6%
Bipolar Transistor
37%
Breakdown Voltage
29%
Buffer Layer
18%
Cap Layer
21%
Capping Layer
6%
Carrier Concentration
13%
Carrier Lifetime
9%
Chemical Vapor Deposition
9%
Close Range
7%
Conduction Band
7%
Current Drain
15%
Current Gain
21%
Current-Voltage Characteristic
7%
Cutoff Frequency
16%
Device Performance
17%
Dielectrics
8%
Dislocation Density
9%
Doppler Velocity
11%
Drift Velocity
8%
Drop Size Distribution
7%
Echo Power
7%
Electric Field
12%
Epitaxial Film
11%
Experimental Result
26%
Feature Point
11%
Fermi Level
7%
Field-Effect Transistor
37%
Figure of Merit
12%
Frequency Domain
15%
Gaas Substrate
17%
Gallium Arsenide
91%
Gate Length
16%
Global Positioning System
10%
Grey Level
7%
Heterojunctions
78%
Heterostructures
19%
High Resolution
9%
Hyperspectral Data
7%
Hyperspectral Image
9%
Indium Content
10%
Indium Gallium Arsenide
64%
Inertial Measurement
10%
Interferometry
29%
Layer Structure
9%
Layer Thickness
8%
Light-Emitting Diode
36%
Localized State
9%
Location Estimation
13%
Low-Temperature
32%
Metal Organic Chemical Vapor Deposition
13%
Metal-Oxide-Semiconductor Field-Effect Transistor
9%
Model Building
44%
Nitride
15%
Ohmic Contacts
18%
Optical Pulse
8%
Output Power
11%
Passivation
12%
Photodetector
15%
Photodiode
14%
Photometer
25%
Photonics
23%
Piezoelectric
18%
Point Cloud
18%
Power Device
6%
Quantum Dot
74%
Quantum Well
70%
Radar Beam
10%
Radar Echo
11%
Reflectance
15%
Resonant Cavity
7%
Responsivity
10%
Room Temperature
14%
Scatterer
7%
Schottky Barrier
9%
Sheet Resistance
10%
Si Substrate
13%
Silicon Substrate
7%
Single Image
7%
Spectral Feature
7%
Spectral Width
9%
Stimulated Emission
6%
Superlattice
13%
Synthetic Aperture Radar
6%
Temperature Coefficient
6%
Temperature Dependence
9%
Temperature Range
7%
Terahertz
15%
Terminal Velocity
10%
Thin Films
10%
Tracking (Position)
10%
Transients
8%
Two Dimensional
11%
Units of Measurement
10%
Vapor Deposition
9%