Keyphrases
Taiwan
100%
Gallium Arsenide
99%
Indium Gallium Nitride (InGaN)
95%
GaN HEMT
60%
Molecular Beam Epitaxy
60%
InGaAs
55%
AlGaN-GaN
51%
Quantum Dots
51%
VHF Radar
50%
Multiple Quantum Wells
44%
Low Temperature
34%
Epilayer
32%
InAs Quantum Dots
32%
Optical Properties
32%
High Electron Mobility Transistor
31%
Light-emitting Diodes
31%
Metal-organic Chemical Vapor Deposition (MOCVD)
30%
Building Model
29%
Surface Deformation
28%
GaAs Substrate
28%
AlGaAs
27%
InGaN Quantum Wells
27%
Photoluminescence
26%
InAlAs
26%
InGaSb
26%
Temperature Effect
25%
Heterojunction Bipolar Transistors
24%
GaAsSb
24%
GaN Heterostructure
24%
Room Temperature
24%
Capping Layer
23%
Landslide
23%
Quantum Dot Lasers
22%
Quantum Well Structure
22%
Double Heterojunction Bipolar Transistor
22%
GaAs Quantum Dot
22%
Electrical Properties
22%
P-GaN
22%
Rectifier
21%
Backscatter
21%
Southern Taiwan
20%
Field-aligned Irregularities
20%
Multiple Quantum Well Structure
20%
Aluminum Gallium Nitride (AlGaN)
20%
Metal-semiconductor-metal Photodetector
19%
Heterostructure Field-effect Transistors
19%
Quantum Well
19%
Si Substrate
19%
Hyperspectral
19%
AlxGa1-xN
18%
Optical Transmitters
18%
Interferometric Synthetic Aperture Radar (InSAR)
18%
Spectral Width
18%
Schottky Rectifier
18%
Device Performance
17%
AlSb
17%
Earthquake
17%
Interferometry
16%
Self-assembled Quantum Dots
16%
E-region
16%
Sapphire
16%
Sporadic E
16%
Ohmic Contact
16%
GaAs-AlGaAs
16%
Reverse Breakdown Voltage
16%
Land Subsidence
16%
InGaAs Quantum Dots
16%
Plasma Irregularities
15%
Gate Length
15%
Transistor
15%
Recombination
15%
Three-dimensional (3D)
15%
Doppler Velocity
15%
Cm(III)
15%
GaN-based
15%
Differential Interferometric Synthetic Aperture Radar (DInSAR)
15%
Ni-P
14%
Indium Content
14%
SAR Interferometry
14%
Photonic Crystal Nanocavity
14%
Annealing
14%
Undoped
14%
Transconductance
13%
Fmax
13%
MSM Photodetector
13%
Central Taiwan
13%
AlInGaN
13%
Field-effect Transistors
13%
Turn-on Voltage
13%
Stimulated Emission
13%
Radar Echo
13%
Landslide Susceptibility
12%
P-type
12%
Buffer Layer
12%
Photorealistic
12%
Frequency Domain Interferometry
12%
Carrier Dynamics
12%
Location Estimation
12%
Ultraviolet Light-emitting Diode (UV-LED)
12%
Subsidence
12%
Engineering
Gallium Arsenide
91%
Heterojunctions
80%
Quantum Dot
76%
Quantum Well
72%
Indium Gallium Arsenide
65%
Model Building
42%
Bipolar Transistor
38%
Field-Effect Transistor
38%
Light-Emitting Diode
37%
Aluminium Gallium Arsenide
31%
Interferometry
30%
Low-Temperature
30%
Breakdown Voltage
30%
Experimental Result
26%
Photometer
26%
Photonics
24%
Current Gain
22%
Cap Layer
22%
Point Cloud
19%
Piezoelectric
19%
Ohmic Contacts
18%
Heterostructures
18%
Buffer Layer
18%
Device Performance
18%
Gate Length
17%
Cutoff Frequency
17%
Phase Composition
16%
Photodetector
16%
Gaas Substrate
16%
Terahertz
16%
Reflectance
15%
Energy Engineering
15%
Nitride
15%
Current Drain
15%
Band Gap
15%
Room Temperature
15%
Frequency Domain
15%
Photodiode
14%
Filtration
14%
Si Substrate
14%
Carrier Concentration
13%
Metal Organic Chemical Vapor Deposition
13%
Superlattice
13%
Location Estimation
13%
Electric Field
13%
Passivation
13%
Antenna
12%
Figure of Merit
12%
Two Dimensional
11%
Epitaxial Film
11%
Output Power
11%
Radar Echo
11%
Responsivity
11%
Sheet Resistance
11%
Doppler Velocity
10%
Thin Films
10%
Radar Beam
10%
Feature Point
10%
Inertial Measurement
10%
Units of Measurement
10%
Terminal Velocity
10%
Tracking (Position)
10%
Hyperspectral Image
10%
Indium Content
10%
Schottky Barrier
10%
Dislocation Density
10%
Global Positioning System
10%
Temperature Dependence
9%
Layer Structure
9%
Metal-Oxide-Semiconductor Field-Effect Transistor
9%
Vapor Deposition
9%
Chemical Vapor Deposition
9%
Localized State
9%
Spectral Width
8%
Optical Pulse
8%
Carrier Lifetime
8%
High Resolution
8%
Layer Thickness
8%
Drift Velocity
8%
Hyperspectral Data
8%
Dielectrics
8%
Grey Level
8%
Spectral Feature
7%
Current-Voltage Characteristic
7%
Single Image
7%
Transients
7%
Close Range
7%
Barrier Layer
7%
Drop Size Distribution
7%
Resonant Cavity
7%
Fermi Level
7%
Conduction Band
7%
Temperature Range
7%
Activation Energy
7%
Silicon Substrate
6%
Power Device
6%
Temperature Coefficient
6%
Stimulated Emission
6%
Capping Layer
6%
Bias Voltage
6%