Keyphrases
Taiwan
100%
Gallium Arsenide
99%
Indium Gallium Nitride (InGaN)
96%
Molecular Beam Epitaxy
60%
GaN HEMT
59%
InGaAs
55%
AlGaN-GaN
50%
Quantum Dots
50%
VHF Radar
49%
Multiple Quantum Wells
44%
Low Temperature
35%
Light-emitting Diodes
32%
Epilayer
32%
Metal-organic Chemical Vapor Deposition (MOCVD)
32%
InAs Quantum Dots
32%
Optical Properties
32%
High Electron Mobility Transistor
30%
Building Model
30%
GaAs Substrate
29%
InGaN Quantum Wells
28%
AlGaAs
27%
InGaSb
27%
Surface Deformation
27%
Optical Transmitters
26%
Photoluminescence
26%
GaN Heterostructure
25%
InAlAs
25%
GaAsSb
24%
Temperature Effect
24%
Quantum Well Structure
24%
Heterojunction Bipolar Transistors
24%
Room Temperature
23%
Capping Layer
23%
Landslide
22%
Quantum Dot Lasers
22%
Double Heterojunction Bipolar Transistor
22%
GaAs Quantum Dot
21%
Aluminum Gallium Nitride (AlGaN)
21%
Electrical Properties
21%
P-GaN
21%
Si Substrate
21%
Rectifier
21%
Backscatter
20%
Southern Taiwan
20%
AlSb
20%
Quantum Well
20%
Multiple Quantum Well Structure
19%
Spectral Width
19%
Field-aligned Irregularities
19%
Metal-semiconductor-metal Photodetector
18%
Heterostructure Field-effect Transistors
18%
Hyperspectral
18%
Device Performance
18%
AlxGa1-xN
18%
Interferometric Synthetic Aperture Radar (InSAR)
18%
Schottky Rectifier
17%
GaN-based
17%
Interferometry
16%
Sporadic E
16%
Earthquake
16%
Doppler Velocity
16%
Terahertz Photonics
16%
Self-assembled Quantum Dots
16%
E-region
16%
Sapphire
16%
Ohmic Contact
16%
GaAs-AlGaAs
16%
Gate Length
16%
Reverse Breakdown Voltage
16%
Plasma Irregularities
16%
Land Subsidence
16%
InGaAs Quantum Dots
15%
Three-dimensional (3D)
15%
Transistor
15%
Recombination
15%
Indium Content
15%
Cm(III)
15%
Heterostructure
15%
Differential Interferometric Synthetic Aperture Radar (DInSAR)
14%
Ni-P
14%
Undoped
14%
Terahertz
14%
SAR Interferometry
14%
Photonic Crystal Nanocavity
14%
Annealing
14%
Transconductance
14%
Radar Echo
13%
Fmax
13%
Buffer Layer
13%
MSM Photodetector
13%
Central Taiwan
13%
AlInGaN
13%
Spatial Analysis
13%
P-type
13%
Field-effect Transistors
13%
Turn-on Voltage
12%
Stimulated Emission
12%
Landslide Susceptibility
12%
Photorealistic
12%
Frequency Domain Interferometry
12%
Engineering
Gallium Arsenide
92%
Heterojunctions
80%
Quantum Dot
74%
Quantum Well
74%
Indium Gallium Arsenide
64%
Model Building
43%
Light-Emitting Diode
40%
Bipolar Transistor
37%
Field-Effect Transistor
37%
Low-Temperature
32%
Aluminium Gallium Arsenide
31%
Breakdown Voltage
30%
Interferometry
29%
Experimental Result
26%
Photonics
25%
Photometer
25%
Current Gain
23%
Cap Layer
21%
Heterostructures
21%
Terahertz
19%
Buffer Layer
19%
Piezoelectric
18%
Ohmic Contacts
18%
Gate Length
18%
Cutoff Frequency
18%
Device Performance
18%
Point Cloud
17%
Current Drain
17%
Metal Organic Chemical Vapor Deposition
17%
Nitride
17%
Gaas Substrate
17%
Photodetector
15%
Si Substrate
15%
Reflectance
15%
Frequency Domain
15%
Band Gap
14%
Room Temperature
14%
Carrier Concentration
14%
Photodiode
14%
Antenna
13%
Location Estimation
13%
Superlattice
13%
Passivation
12%
Dislocation Density
12%
Output Power
12%
Figure of Merit
12%
Indium Content
12%
Radar Echo
12%
Two Dimensional
11%
Doppler Velocity
11%
Epitaxial Film
11%
Feature Point
11%
Electric Field
10%
Responsivity
10%
Sheet Resistance
10%
Thin Films
10%
Vapor Deposition
10%
Chemical Vapor Deposition
10%
Inertial Measurement
10%
Units of Measurement
10%
Terminal Velocity
10%
Tracking (Position)
10%
Localized State
10%
Radar Beam
10%
Schottky Barrier
9%
Metal-Oxide-Semiconductor Field-Effect Transistor
9%
Temperature Dependence
9%
Carrier Lifetime
9%
Layer Structure
9%
Spectral Width
9%
Hyperspectral Image
9%
Global Positioning System
9%
High Resolution
9%
Optical Pulse
8%
Luminaires
8%
Barrier Layer
8%
Layer Thickness
8%
Dielectrics
8%
Transients
8%
Close Range
7%
Spectral Feature
7%
Silicon Dioxide
7%
Current-Voltage Characteristic
7%
Scatterer
7%
Hyperspectral Data
7%
Single Image
7%
Atomic Force Microscopy
7%
Power Device
7%
Drop Size Distribution
7%
Resonant Cavity
7%
Silicon Substrate
7%
Fermi Level
7%
Conduction Band
7%
Grey Level
7%
Temperature Range
7%
Echo Power
7%
Activation Energy
7%
Temperature Coefficient
6%
Stimulated Emission
6%
Synthetic Aperture Radar
6%